Santos, Thales Borrely dos 
; Alzeidan, Ahmad ; Lima, Marcelo Delmondes de; Jacobsen, Gabriel Marques ; Huang, T Y; Yang, Y C; Cantalice, Tiago Fernandes de ; Goldman, R S; Teodoro, M D; Quivy, Alain André
Fonte: Solar Energy Materials and Solar Cells. Unidade: IF
Assunto: EPITAXIA POR FEIXE MOLECULAR
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SANTOS, Thales Borrely dos et al. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, v. 254, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.solmat.2023.112281. Acesso em: 01 maio 2024.APA
Santos, T. B. dos, Alzeidan, A., Lima, M. D. de, Jacobsen, G. M., Huang, T. Y., Yang, Y. C., et al. (2023). Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction. Solar Energy Materials and Solar Cells, 254. doi:10.1016/j.solmat.2023.112281NLM
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281Vancouver
Santos TB dos, Alzeidan A, Lima MD de, Jacobsen GM, Huang TY, Yang YC, Cantalice TF de, Goldman RS, Teodoro MD, Quivy AA. Viability of intermediate band solar cells based on InAs/GaAs submonolayer quantum dots and the role of surface reconstruction [Internet]. Solar Energy Materials and Solar Cells. 2023 ; 254[citado 2024 maio 01 ] Available from: https://doi.org/10.1016/j.solmat.2023.112281
